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IRG4BC10SD, 600 volt 14 amp, n-channel, igbt, qty 10


IGBT w/ ULTRAFAST SOFT RECOVERY DIODE
IRG4BC10SD, 600V, 14A, Insulated Gate Bipolar Transistor, 3 Pin TO-220, Quantity 10, International Rectifier.
* Extremely low voltage drop 1.1Vtyp. @ 2A
* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
* Very Tight Vce(on) distribution
* IGBT co-packaged with HEXFRED
ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
* HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
* Lower losses than MOSFET's conduction and Diode losses



IRG4BC10SD, 600 volt 14 amp, n-channel, igbt, qty 10