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> Spansion S29GL128/S29GL-p 128M 56-p page flash memory
Spansion S29GL128/S29GL-p 128M 56-p page flash memory
Spansion S29GL128/S29GL-P 128M 56-P Page Flash Memory
Spansion S29GL128/S29GL-P 3V 128M 56-P Page Flash Memory
S29GL-P MirrorBitTM Flash Family
S29GL01GP, S29GL512P, S29GL256P, S29GL128P 1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process
The Spansion S29GL01G/512/256/128P are Mirrorbit Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time of 110 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today s embedded applications that require higher density, better performance and lower power consumption.
Single 3V read/program/erase (2.7-3.6 V) Enhanced Versatile I/O control
All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
56-pin TSOP 64-ball Fortified BGA
90 nm MirrorBit process technology 8-word/16-byte page read buffer 32-word/64-byte write buffer reduces overall programming time for multiple-word updates Secured Silicon Sector region
Suspend and Resume commands for Program and Erase operations Write operation status bits indicate program and erase operation completion Unlock Bypass Program command to reduce programming time Support for CFI (Common Flash Interface) Persistent and Password methods of Advanced Sector Protection WP#/ACC input
Accelerates programming time (when VACC is applied) for greater throughput during system production Protects first or last sector regardless of sector protection settings
Uniform 64Kword/128KByte Sector Architecture
S29GL01GP: One thousand twenty-four sectors S29GL512P: Five hundred twelve sectors S29GL256P: Two hundred fifty-six sectors S29GL128P: One hundred twenty-eight sectors
Hardware reset input (RESET#) resets device Ready/Busy# output (RY/BY#) detects program or erase cycle completion
100,000 erase cycles per sector typical 20-year data retention typical
Max. Read Access Times (ns)* 512/256/128 Mb** Parameter Random Access Time (tACC) Page Access Time (tPACC) CE# Access Time (tCE) OE# Access Time (tOE) V1 100 25 110 25 V2 110 25 110 25 V3 120 25 120 30 V1 110 25 110 25 1 Gb V2 120 25 120 25 V3 130 25 130 30 Program & Erase Times (typical values) Single Word Programming Effective Write Buffer Programming (VCC) Per Word Effective Write Buffer Programming (VACC) Per Word Sector Erase Time (64 Kword Sector) 60 s 15 s 15 s 0.5 s Current Consumption (typical values) Random Access Read 8-Word Page Read Program/Erase Standby 30 mA 1 mA 50 mA 1 A
* Access times are dependent on VCC and VIO operating ranges. See Ordering Information page for further details. V1: VCC = 3.0 3.6 V. V2: VCC = VIO = 2.7 3.6 V. V3: VIO = 1.65 VCC, VCC = 3 V.
