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> 8435 / NDS8435- p-ch ,30V, 7.9A 8-soic- lot of 5 pcs
8435 / NDS8435- p-ch ,30V, 7.9A 8-soic- lot of 5 pcs
NDS8435 / NDS8435A - MOSFETs Single P-Ch FET
TA = 25 C unless otherwise noted
Symbol Parameter NDS8435A Units
DSS Drain-Source Voltage -30 V
D Drain Current - Continuous (Note 1a)
D Maximum Power Dissipation (Note 1a) 2.5 W
J,TSTG Operating and Storage Temperature Range -55 to 150 C
qJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W
qJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
